abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v rrm = 5500 v i f(av)m = 175 a i fsm = 310 3 a v (t0) = 3.35 v r t = 7.2 m w v dc-link = 3300 v fast recovery diode 5sdf 02d6004 preliminary doc. no. 5sya1118-02 okt. 02 patented free-floating technology industry standard housing cosmic radiation withstand rating low on-state and switching losses optimized for snubberless operation blocking maximum rated values 1) parameter symbol conditions value unit repetitive peak reverse voltage v rrm f = 50 hz, t p = 10ms, t vj = 115c 5500 v permanent dc voltage for 100 fit failure rate v dc-link ambient cosmic radiation at sea level in open air. (100% duty) 3300 v permanent dc voltage for 100 fit failure rate v dc-link ambient cosmic radiation at sea level in open air. (5% duty) 3900 v characteristic values parameter symbol conditions min typ max unit repetitive peak reverse current i rrm v r = v rrm , t vj = 115c 20 ma mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 14 16 18 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 200 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 0.25 kg housing thickness h 26.0 26.6 mm surface creepage distance d s 30 mm air strike distance d a 20 mm note 1 maximum rated values indicate limits beyond which damage to the device may occur
5sdf 02d6004 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1118-02 okt. 02 page 2 of 5 on-state maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i f(av)m half sine wave, t c = 70 c 175 a max. rms on-state current i f(rms) 275 a max. peak non-repetitive surge current i fsm 310 3 a limiting load integral i 2 t t p = 10 ms, t vj = 115c, v r = 0 v 4510 3 a 2 s max. peak non-repetitive surge current i fsm 810 3 a limiting load integral i 2 t t p = 1 ms, t vj = 115c, v r = 0 v 3210 3 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v f i f = 520 a, t vj = 115c 7.1 v threshold voltage v (t0) 3.35 v slope resistance r t t vj = 115c i f = 200...1000 a 7.2 m w turn-on characteristic values parameter symbol conditions min typ max unit peak forward recovery voltage v frm di f /dt = 1000 a/s, t vj = 115c 370 v turn-off maximum rated values 1) parameter symbol conditions min typ max unit max. decay rate of on-state current di/dt crit i fm = a, t vj = 115 c v dc-link = 3300 v 220 a/ m s characteristic values parameter symbol conditions min typ max unit reverse recovery current i rm 300 a reverse recovery charge q rr c turn-off energy e rr i fq = 520 a, v dc-link = 3300 v di/dt = 220 a/s, l cl = nh c cl = f, r cl = w , t j = 115c 1.8 j
5sdf 02d6004 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1118-02 okt. 02 page 3 of 5 thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj -40 115 c storage temperature range t stg -40 125 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled f m = 14...18 kn 40 k/kw r th(j-c)a anode-side cooled f m = 14...18 kn 80 k/kw r th(j-c)c cathode-side cooled f m = 14...18 kn 80 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 14...18 kn 8 k/kw r th(c-h) single-side cooled f m = 14...18 kn 16 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i th c) - th(j ? = i t i 1 2 3 4 r th i (k/kw) 25.699 9.472 3.381 1.466 t i (s) 0.3802 0.0483 0.0060 0.0018 fig. 1 transient thermal impedance (junction to case) vs. time in analytical and graphical form (max. values)
5sdf 02d6004 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1118-02 okt. 02 page 4 of 5 3 4 5 6 7 8 9 10 11 v f [v] 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 i f [a] tj = 115c 0 100 200 300 400 500 600 i fq [a] 0 50 100 150 200 250 300 350 400 i rr [a] t j = 115c di f /dt = 190 a/s v dclink = 3300 v fig. 2 forward current vs. forward voltage fig. 3 diode reverse recovery current vs. turn-off current 0 100 200 300 400 500 600 i fq [a] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e rr [j] t j = 115c di f /dt = 190 a/s v dclink = 3300 v 0 1000 2000 3000 4000 5000 v dclink [v] 0 100 200 300 400 500 600 i fq [a] t j = 0 - 115c di f /dt = 190 a/s v rm v rrm fig. 4 diode turn-off energy per pulse vs. turn-off current fig. 5 max. repetitive diode forward current
5sdf 02d6004 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1118-02 okt. 02 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors v fr di f /dt i f (t) i f (t) v f (t) t fr t fr (typ) 10 s q rr i rm -di f /dt v f (t), i f (t) v f (t) v r (t) t fig. 6 general current and voltage waveforms fig. 7 outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise related documents: doc. nr titel 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors 5szk 9104 specification of environmental class for pressure contact diodes, pcts and gto, storage available on request, please contact factory 5szk 9105 specification of environmental class for pressure contact diodes, pcts and gto, transportation available on request, please contact factory please refer to http://www.abb.com/semiconductors for current version of documents.
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